DMN65D7LFR4-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V X2-DFN1010
$0.13
Available to order
Reference Price (USD)
1+
$0.12532
500+
$0.1240668
1000+
$0.1228136
1500+
$0.1215604
2000+
$0.1203072
2500+
$0.119054
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DMN65D7LFR4-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMN65D7LFR4-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 40mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1010-4 (Type B)
- Package / Case: 4-XDFN Exposed Pad
Related Products
Diodes Incorporated
DMPH4029LFG-7
Vishay Siliconix
SQM200N04-1M8_GE3
STMicroelectronics
STHU36N60DM6AG
onsemi
TF252TH-5-TL-H
Renesas Electronics America Inc
RJK0356DPA-01#J0
Vishay Siliconix
SQD50P03-07-T4_GE3
Rohm Semiconductor
RSS065N06HZGTB
onsemi
NDCTR4065A
Infineon Technologies
IPT039N15N5ATMA1
Infineon Technologies