DMN61D8LVTQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.63A TSOT26
$0.54
Available to order
Reference Price (USD)
3,000+
$0.20384
6,000+
$0.19207
15,000+
$0.18030
30,000+
$0.17206
Exquisite packaging
Discount
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The DMN61D8LVTQ-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN61D8LVTQ-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 630mA
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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