DMN30H4D0L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 300V 250MA SOT23
$0.18
Available to order
Reference Price (USD)
1+
$0.17775
500+
$0.1759725
1000+
$0.174195
1500+
$0.1724175
2000+
$0.17064
2500+
$0.1688625
Exquisite packaging
Discount
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Upgrade your electronic designs with DMN30H4D0L-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN30H4D0L-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Diodes Incorporated