DMN3066L-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.10098
500+
$0.0999702
1000+
$0.0989604
1500+
$0.0979506
2000+
$0.0969408
2500+
$0.095931
Exquisite packaging
Discount
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Experience the power of DMN3066L-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN3066L-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 353 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 810mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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