DMN3061LCA3-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V X4-DSN1006
$0.14
Available to order
Reference Price (USD)
1+
$0.13755
500+
$0.1361745
1000+
$0.134799
1500+
$0.1334235
2000+
$0.132048
2500+
$0.1306725
Exquisite packaging
Discount
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DMN3061LCA3-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMN3061LCA3-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): 12V
- Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.12W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3 (Type C)
- Package / Case: 3-XFDFN
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