DMN3025LFV-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 25A POWERDI3333
$0.50
Available to order
Reference Price (USD)
3,000+
$0.14931
6,000+
$0.14116
15,000+
$0.13301
30,000+
$0.12323
75,000+
$0.11915
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN3025LFV-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMN3025LFV-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
Related Products
Nexperia USA Inc.
BUK7M5R0-40HX
Infineon Technologies
IPA60R360P7XKSA1
Vishay Siliconix
SI7469DP-T1-E3
IXYS
IXTP4N70X2M
onsemi
NTD65N03R-35G
Diodes Incorporated
DMN2075U-7
Nexperia USA Inc.
PSMN3R4-30BLE,118
Infineon Technologies
IRF6636TRPBF
Fairchild Semiconductor
PN3685
Infineon Technologies