DMN2991UFO-7B
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN0604-
$0.04
Available to order
Reference Price (USD)
1+
$0.04039
500+
$0.0399861
1000+
$0.0395822
1500+
$0.0391783
2000+
$0.0387744
2500+
$0.0383705
Exquisite packaging
Discount
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Upgrade your electronic designs with DMN2991UFO-7B by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMN2991UFO-7B ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 440mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN0604-3
- Package / Case: 3-XFDFN
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