DMN2400UFB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 750MA 3DFN
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07371
6,000+
$0.06480
15,000+
$0.05589
30,000+
$0.05292
75,000+
$0.04995
150,000+
$0.04401
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN2400UFB4-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN2400UFB4-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
Related Products
Fairchild Semiconductor
FDPF51N25YDTU
onsemi
NVTYS005N04CLTWG
onsemi
NVTFS010N10MCLTAG
Diodes Incorporated
DMN4035LQ-7
Nexperia USA Inc.
PMPB10XNX
Diodes Incorporated
ZXMN10A25KTC
Vishay Siliconix
IRFR120TRPBF-BE3
IXYS
IXFN210N30P3
Vishay Siliconix
IRLZ44SPBF
Infineon Technologies