DMN2046U-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 3.4A SOT23
$0.06
Available to order
Reference Price (USD)
1+
$0.06107
500+
$0.0604593
1000+
$0.0598486
1500+
$0.0592379
2000+
$0.0586272
2500+
$0.0580165
Exquisite packaging
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Discover DMN2046U-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 292 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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