DMN2014LHAB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2030-6
$0.18
Available to order
Reference Price (USD)
1+
$0.17685
500+
$0.1750815
1000+
$0.173313
1500+
$0.1715445
2000+
$0.169776
2500+
$0.1680075
Exquisite packaging
Discount
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The DMN2014LHAB-13 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMN2014LHAB-13 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Power - Max: 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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