DMN1150UFB-7B
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 1.41A 3DFN
$0.47
Available to order
Reference Price (USD)
10,000+
$0.07350
30,000+
$0.06938
50,000+
$0.06236
100,000+
$0.06113
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMN1150UFB-7B, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN1150UFB-7B is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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