DMN10H700S-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 700MA SOT23
$0.07
Available to order
Reference Price (USD)
1+
$0.06917
500+
$0.0684783
1000+
$0.0677866
1500+
$0.0670949
2000+
$0.0664032
2500+
$0.0657115
Exquisite packaging
Discount
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Diodes Incorporated presents DMN10H700S-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMN10H700S-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
- FET Feature: Standard
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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