DMN1033UCB4-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 12V U-WLB1818-4
$0.78
Available to order
Reference Price (USD)
3,000+
$0.28710
6,000+
$0.26730
15,000+
$0.25740
30,000+
$0.25200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN1033UCB4-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN1033UCB4-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.45W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-UFBGA, WLBGA
- Supplier Device Package: U-WLB1818-4
Related Products
onsemi
FDMS7700S
General Electric
GE12047BCA3
Alpha & Omega Semiconductor Inc.
AOD603A
IXYS
IXFN130N90SK
Alpha & Omega Semiconductor Inc.
AOTS32338C
onsemi
MCH6602-TL-E
onsemi
NDC7003P
Infineon Technologies
IPG20N04S412AATMA1
Panasonic Electronic Components
SC8673010L
Infineon Technologies