DMMT5551-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 160V 0.2A SOT26
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak performance with Diodes Incorporated's DMMT5551-7 BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
Infineon Technologies
SMBT3906SE6327HTSA1
Panasonic Electronic Components
XP0250100L
Diodes Incorporated
ZXTD1M832TA
onsemi
BC847BS
Diodes Incorporated
ZDT751TC
Panasonic Electronic Components
DMG204B10R
Toshiba Semiconductor and Storage
HN1A01F-Y(TE85L,F)
onsemi
MBT3906DW1T2G
onsemi
FFB3906
Nexperia USA Inc.