DMG9933USD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2P-CH 20V 4.6A 8SO
$0.46
Available to order
Reference Price (USD)
2,500+
$0.17145
5,000+
$0.16155
12,500+
$0.15165
25,000+
$0.14472
62,500+
$0.14400
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s DMG9933USD-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMG9933USD-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMG9933USD-13.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
- Power - Max: 1.15W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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