DMG4N60SK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 600V 3.7A TO252 T&R
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DMG4N60SK3-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMG4N60SK3-13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 48W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRFI4905
NXP USA Inc.
PSMN035-150P
Infineon Technologies
IPB80N06S2L11ATMA1
Transphorm
TPH3202PD
Fairchild Semiconductor
HUFA75617D3S
Infineon Technologies
IPI80P04P4L06AKSA1
Alpha & Omega Semiconductor Inc.
AO3422L_104
NXP USA Inc.
PHM21NQ15T,518
Vishay Siliconix
2N6660JTVP02
Panasonic Electronic Components