DMG1013UWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 820MA SOT323
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMG1013UWQ-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMG1013UWQ-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 310mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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