DGD2012S8-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRV HALF-BRIDGE 8SO 2.5K
$0.00
Available to order
Reference Price (USD)
2,500+
$0.64000
5,000+
$0.61200
12,500+
$0.59200
Exquisite packaging
Discount
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Enhance your electronic designs with Diodes Incorporated's DGD2012S8-13 Gate Drivers, engineered for superior performance in demanding environments. These ICs boast features such as low EMI, high efficiency, and robust thermal management, making them ideal for automotive, aerospace, and medical devices. Diodes Incorporated is committed to delivering innovative solutions that meet your exact requirements. Don't hesitate request a sample or quotation today!
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 200 V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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