DDTB113ZC-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04707
6,000+
$0.04140
15,000+
$0.03573
30,000+
$0.03384
75,000+
$0.03195
150,000+
$0.02880
Exquisite packaging
Discount
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Optimize your circuits with the DDTB113ZC-7-F from Diodes Incorporated, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Diodes Incorporated provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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