DDC114EUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.08
Available to order
Reference Price (USD)
1+
$0.08014
500+
$0.0793386
1000+
$0.0785372
1500+
$0.0777358
2000+
$0.0769344
2500+
$0.076133
Exquisite packaging
Discount
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Select Diodes Incorporated's DDC114EUQ-7-F for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Diodes Incorporated offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your DDC114EUQ-7-F inquiry our team awaits your requirements!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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