DD800S17H4B2BOSA2
Infineon Technologies
Infineon Technologies
DIODE MODUL GP 1700V AGIHMB130-1
$1,275.58
Available to order
Reference Price (USD)
2+
$839.20000
Exquisite packaging
Discount
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Experience unparalleled performance with the DD800S17H4B2BOSA2 from Infineon Technologies, a key player in the Diodes - Rectifiers - Arrays segment of Discrete Semiconductor Products. These diodes are engineered for precision and durability, offering features such as fast recovery time and high current density. The DD800S17H4B2BOSA2 is perfect for applications requiring reliable rectification and array configurations. Infineon Technologies ensures every product meets stringent quality controls. Contact us today to request a sample or to discuss bulk purchase options!
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 900 A @ 900 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHMB130-1
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