CYD02S18V-133BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 128KX18
$72.00
Available to order
Reference Price (USD)
1+
$72.00000
500+
$71.28
1000+
$70.56
1500+
$69.84
2000+
$69.12
2500+
$68.4
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Rochester Electronics, LLC CYD02S18V-133BBI Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Rochester Electronics, LLC CYD02S18V-133BBI ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Standard
- Memory Size: 2Mb (128K x 18)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.7 ns
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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