CY7C25652KV18-500BZI
Infineon Technologies
Infineon Technologies
NO WARRANTY
$351.67
Available to order
Reference Price (USD)
1+
$271.92000
10+
$267.89100
25+
$261.84800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Infineon Technologies CY7C25652KV18-500BZI Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Infineon Technologies CY7C25652KV18-500BZI ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II+
- Memory Size: 72Mb (2M x 36)
- Memory Interface: Parallel
- Clock Frequency: 500 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
Related Products
Microchip Technology
93LC76CT-I/MS
Microchip Technology
23LC1024T-E/ST
Infineon Technologies
FM25V20A-DGTR
ISSI, Integrated Silicon Solution Inc
IS61QDPB42M36A2-500B4LI
Microchip Technology
SST39SF020A-70-4I-NHE
Renesas Electronics America Inc
71V546S100PFG8
Micron Technology Inc.
MT58L32L32DT-10
Micron Technology Inc.
MT29F128G08AJAAAWP-ITZ:A
Microchip Technology
24AA08HT-I/MNY
Infineon Technologies