CY7C1383B-100BZI
Rochester Electronics, LLC
Rochester Electronics, LLC
STANDARD SRAM, 1MX18, 8.5NS
$19.06
Available to order
Reference Price (USD)
1+
$19.06000
500+
$18.8694
1000+
$18.6788
1500+
$18.4882
2000+
$18.2976
2500+
$18.107
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance Rochester Electronics, LLC CY7C1383B-100BZI Memory ICs designed for reliability and speed. These Memory ICs are widely used in data storage, computing systems, and consumer electronics, offering seamless integration and robust performance. Key features include high-speed data transfer, low power consumption, and exceptional durability. Whether for industrial or commercial applications, Rochester Electronics, LLC CY7C1383B-100BZI ensures optimal performance. Contact us today for a quote and let our experts assist you with your memory solution needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
Related Products
Texas Instruments
TMS55161-70ADGH
Macronix
MX25L12873FMI-10G
Infineon Technologies
S25FL128SAGMFVG00
Infineon Technologies
S25FL128SDPMFV000
ISSI, Integrated Silicon Solution Inc
IS62WV12816BLL-55BLI
Infineon Technologies
FM25V02A-DGQTR
Micron Technology Inc.
MT58L64L36DT-10
Infineon Technologies
CY7C1565KV18-400BZXI
ISSI, Integrated Silicon Solution Inc
IS43DR82560C-25DBL
Micron Technology Inc.