CY7C1370DV25-200BZI
Rochester Electronics, LLC
Rochester Electronics, LLC
ZBT SRAM, 512KX36, 3NS
$14.04
Available to order
Reference Price (USD)
1+
$14.04000
500+
$13.8996
1000+
$13.7592
1500+
$13.6188
2000+
$13.4784
2500+
$13.338
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Rochester Electronics, LLC CY7C1370DV25-200BZI Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Rochester Electronics, LLC CY7C1370DV25-200BZI ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3 ns
- Voltage - Supply: 2.375V ~ 2.625V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
Related Products
Microchip Technology
24LC65T-I/SM
Rochester Electronics, LLC
CY7C0430BV-100BGI
STMicroelectronics
M24C32-FMC6TG
Infineon Technologies
S29GL512T10DHI013
ISSI, Integrated Silicon Solution Inc
IS43R86400D-6TLI-TR
Flip Electronics
S25FL064P0XNFI001
ISSI, Integrated Silicon Solution Inc
IS43DR81280B-25DBLI-TR
Microchip Technology
24AA01-I/P
Infineon Technologies
CY15B016J-SXET
Infineon Technologies