CY7C1370B-200BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
ZBT SRAM, 512KX36, 3NS
$17.05
Available to order
Reference Price (USD)
1+
$17.05000
500+
$16.8795
1000+
$16.709
1500+
$16.5385
2000+
$16.368
2500+
$16.1975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your memory solutions with Rochester Electronics, LLC CY7C1370B-200BGC ICs, built for speed and reliability. Perfect for data centers, automotive infotainment, and wearable tech, these ICs include features such as high bandwidth, low latency, and long-term durability. Rochester Electronics, LLC CY7C1370B-200BGC is your trusted partner in advanced memory technology. Inquire now to discover how we can meet your specific needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
Microchip Technology
93AA56BX-I/SN
Infineon Technologies
CY7C1520V18-167BZXC
Microchip Technology
24LC014-E/ST
Alliance Memory, Inc.
AS6C2008A-55TIN
ISSI, Integrated Silicon Solution Inc
IS61LPD51236A-250B3LI-TR
Micron Technology Inc.
MT53E512M32D1ZW-046 IT:B TR
Winbond Electronics
W632GG8NB11I TR
ISSI, Integrated Silicon Solution Inc
IS43TR16640CL-125JBL
Microchip Technology
SST25WF080BT-40I/NP
Renesas Electronics America Inc