CY7C1361B-100BZI
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 256KX36, 8.5NS
$7.80
Available to order
Reference Price (USD)
1+
$7.80000
500+
$7.722
1000+
$7.644
1500+
$7.566
2000+
$7.488
2500+
$7.41
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust Rochester Electronics, LLC CY7C1361B-100BZI Memory ICs for all your critical storage needs, offering industry-leading technology. Designed for applications in military, healthcare, and telecommunications, these ICs feature secure data retention, high cycle endurance, and broad compatibility. Rochester Electronics, LLC CY7C1361B-100BZI sets the standard in memory innovation. Place your inquiry now and benefit from our expertise and support!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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