CY7C1361B-100BGCT
Rochester Electronics, LLC
Rochester Electronics, LLC
SRAM 3.3V 9M-BIT 256K X 36 8.5NS
$7.71
Available to order
Reference Price (USD)
1+
$7.71000
500+
$7.6329
1000+
$7.5558
1500+
$7.4787
2000+
$7.4016
2500+
$7.3245
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's potential with Rochester Electronics, LLC CY7C1361B-100BGCT Memory ICs, crafted for precision and performance. Suitable for robotics, surveillance systems, and smart grids, these ICs boast features like non-volatile storage, high-speed interfaces, and minimal power draw. Rochester Electronics, LLC CY7C1361B-100BGCT delivers unmatched quality. Start a conversation with us today to explore customized solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 8.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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