CY7C1347B-100BGC
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 128KX36, 5.5NS
$4.67
Available to order
Reference Price (USD)
1+
$4.67000
500+
$4.6233
1000+
$4.5766
1500+
$4.5299
2000+
$4.4832
2500+
$4.4365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Rochester Electronics, LLC CY7C1347B-100BGC Memory ICs deliver cutting-edge technology for modern applications. Perfect for automotive, telecommunications, and IoT devices, these ICs offer high reliability and low latency. Notable features are extended lifecycle, wide temperature range, and compatibility with multiple interfaces. Choose Rochester Electronics, LLC CY7C1347B-100BGC for superior memory solutions. Get in touch with us today to discuss your project needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (128K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.5 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
Related Products
Micron Technology Inc.
MT53B1024M32D4NQ-062 WT:C TR
Microchip Technology
AT28HC64B-70SU-T
Micron Technology Inc.
MT29F256G08CECEBJ4-37ITR:E TR
Infineon Technologies
CY7C1471V33-133AXC
Microchip Technology
27C256T-20/L271
ISSI, Integrated Silicon Solution Inc
IS43DR16160B-25DBL-TR
Macronix
MX25U1633FZUI
Renesas Electronics America Inc
70V658S12BC8
Flip Electronics
S25FL132K0XMFI013
Infineon Technologies