CY7C1327B-100BGCT
Rochester Electronics, LLC
Rochester Electronics, LLC
CACHE SRAM, 256KX18, 5.5NS
$4.34
Available to order
Reference Price (USD)
1+
$4.34000
500+
$4.2966
1000+
$4.2532
1500+
$4.2098
2000+
$4.1664
2500+
$4.123
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Rochester Electronics, LLC CY7C1327B-100BGCT Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Rochester Electronics, LLC CY7C1327B-100BGCT ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 4.5Mb (256K x 18)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.5 ns
- Voltage - Supply: 3.15V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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