CY7C1312KV18-300BZXCT
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$32.12
Available to order
Reference Price (USD)
1,000+
$24.82610
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-gen storage solutions with Infineon Technologies CY7C1312KV18-300BZXCT Memory ICs, tailored for performance-driven applications. From enterprise storage to mobile devices, these ICs offer features like multi-level caching, wear leveling, and shock resistance. Infineon Technologies CY7C1312KV18-300BZXCT ensures your data is always accessible and secure. Send us your requirements today and let s collaborate on your next project!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 300 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
Related Products
Infineon Technologies
S29GL01GS12DHIV20
Renesas Electronics America Inc
71256SA20PZG8
Microchip Technology
24LC256-E/MS
Renesas Electronics America Inc
6116LA120DB
Rochester Electronics, LLC
CY7C1340A-66AI
Alliance Memory, Inc.
AS7C4098A-15JIN
Infineon Technologies
S25FL032P0XNFB000
Infineon Technologies
S25FL128LAGBHB023
Micron Technology Inc.
MT35XU01GBBA2G12-0AUT
Infineon Technologies