CUHS20S60,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SCHOTTKY BARRIER DIODE, HIGH VBR
$0.11
Available to order
Reference Price (USD)
1+
$0.10890
500+
$0.107811
1000+
$0.106722
1500+
$0.105633
2000+
$0.104544
2500+
$0.103455
Exquisite packaging
Discount
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Discover high-quality CUHS20S60,H3F Single Rectifier Diodes from Toshiba Semiconductor and Storage, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Toshiba Semiconductor and Storage's CUHS20S60,H3F delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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