CSD19506KTTT
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 200A DDPAK
$6.52
Available to order
Reference Price (USD)
1+
$6.52000
500+
$6.4548
1000+
$6.3896
1500+
$6.3244
2000+
$6.2592
2500+
$6.194
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with CSD19506KTTT, a high-quality Transistors - FETs, MOSFETs - Single from Texas Instruments. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, CSD19506KTTT provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Related Products
IXYS
IXTH260N055T2
Panjit International Inc.
2N7002KW_R1_00001
onsemi
FDMC3020DC
STMicroelectronics
STW7NK90Z
Torex Semiconductor Ltd
XP151A13A0MR-G
Nexperia USA Inc.
PMPB20XPE,115
Microchip Technology
APT60N60SCSG
Infineon Technologies
IRFB7437PBF
Panjit International Inc.
PJP2NA1K_T0_00001
onsemi