CSD19506KTT
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 200A DDPAK
$5.59
Available to order
Reference Price (USD)
500+
$2.89504
1,000+
$2.45485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Texas Instruments presents CSD19506KTT, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, CSD19506KTT delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DDPAK/TO-263-3
- Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Related Products
Vishay Siliconix
SIHH14N60EF-T1-GE3
Panjit International Inc.
PJW5N10A_R2_00001
Alpha & Omega Semiconductor Inc.
AON3402
Infineon Technologies
IRFS3006TRLPBF
Toshiba Semiconductor and Storage
TK33S10N1L,LQ
Renesas Electronics America Inc
NP50P04SDG-E1-AY
onsemi
FDB390N15A
Infineon Technologies
IRLB4132PBF
Vishay Siliconix
SIR622DP-T1-RE3
Nexperia USA Inc.