CPV363M4F
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 16A 36W IMS-2
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Vishay General Semiconductor - Diodes Division's CPV363M4F IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 16 A
- Power - Max: 36 W
- Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.1 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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