CPV362M4K
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 5.7A 23W IMS-2
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Reference Price (USD)
160+
$33.35000
Exquisite packaging
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Vishay General Semiconductor - Diodes Division's CPV362M4K IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 5.7 A
- Power - Max: 23 W
- Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 450 pF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2