BZX884B5V6L-HG3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
ZENER DIODE DFN1006-2A
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Power your innovations with BZX884B5V6L-HG3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, designed for precision and durability. These diodes offer features such as excellent temperature stability, low reverse leakage, and high surge resistance, making them ideal for automotive electronics, solar inverters, and battery management systems. Count on us for high-performance solutions. Interested in custom specifications? Contact our team now for expert guidance and swift delivery!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 5.6 V
- Tolerance: ±2%
- Power - Max: 300 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2A
Related Products
Microchip Technology
1N4492US/TR
Renesas Electronics America Inc
HZ36-1TD-E
Rohm Semiconductor
VDZT2R10B
Nexperia USA Inc.
BZX84J-C9V1,115
Diodes Incorporated
SMAZ9V1-13-F
Microchip Technology
SMBJ5350BE3/TR13
Vishay General Semiconductor - Diodes Division
GDZ6V2B-E3-08
Comchip Technology
CZRUR39VB-HF
Microchip Technology
1N3519A
Nexperia USA Inc.