BZT52C39-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04053
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your designs with BZT52C39-HE3-18 Zener Diodes by Vishay General Semiconductor - Diodes Division, the go-to choice for engineers worldwide. These diodes feature outstanding voltage accuracy, low noise, and high reliability, suitable for telecommunications, data centers, and wearable technology. We pride ourselves on delivering components that exceed expectations. Need assistance or a quote? Don t hesitate contact us now and let s find the perfect solution for your application!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: ±5%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 50 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 29 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Microchip Technology
JANTX1N3823A-1
Taiwan Semiconductor Corporation
1SMB5926
Microchip Technology
JAN1N4578A-1
Microchip Technology
1N5537B
Taiwan Semiconductor Corporation
1N4763AH
Microchip Technology
JAN1N4467US
onsemi
MM3Z56VB
Vishay General Semiconductor - Diodes Division
ZPY7V5-TR
Diodes Incorporated
BZT52C33-13
Microchip Technology