BZT52B6V2-G RHG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
3,000+
$0.04514
Exquisite packaging
Discount
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The BZT52B6V2-G RHG Zener Diodes by Taiwan Semiconductor Corporation set the benchmark for reliability and precision in voltage regulation. Featuring low dynamic impedance, high power handling, and superior thermal characteristics, these diodes are suited for aerospace, defense, and high-end computing applications. Trust our industry-leading quality for your critical projects. Need more details or ready to place an order? Send us your inquiry and we ll provide the best options for you!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.2 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 10 Ohms
- Current - Reverse Leakage @ Vr: 3 µA @ 4 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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