BZT52B3V9-G RHG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
3,000+
$0.04514
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B3V9-G RHG Zener Diodes from Taiwan Semiconductor Corporation are engineered for superior voltage control in electronic designs. With features like precise voltage tolerance, robust thermal performance, and long-term durability, these diodes excel in applications such as power supplies, telecommunication devices, and automotive systems. Ensure your projects run smoothly with our reliable components. Ready to order or need technical advice? Submit your inquiry today and we ll respond promptly!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.9 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 90 Ohms
- Current - Reverse Leakage @ Vr: 3 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Micro Commercial Co
MMBZ5238BW-TP
Semtech Corporation
JANTX1N4958.TR
Taiwan Semiconductor Corporation
BZD27C12PWH
NTE Electronics, Inc
NTE5217A
Vishay General Semiconductor - Diodes Division
BZX384B47-HE3-08
Diotec Semiconductor
BZX84B24
onsemi
1N5917BRLG
Microchip Technology
JAN1N3821C-1
Microchip Technology
JANTX1N4126UR-1
Microchip Technology