BZT52B3V6-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
10,000+
$0.04284
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B3V6-HE3-18 Zener Diodes by Vishay General Semiconductor - Diodes Division set the benchmark for reliability and precision in voltage regulation. Featuring low dynamic impedance, high power handling, and superior thermal characteristics, these diodes are suited for aerospace, defense, and high-end computing applications. Trust our industry-leading quality for your critical projects. Need more details or ready to place an order? Send us your inquiry and we ll provide the best options for you!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.6 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Microchip Technology
1PMT5926BE3/TR13
Diodes Incorporated
BZT52C18SQ-7-F
Microchip Technology
CD752A
Vishay General Semiconductor - Diodes Division
BZD27C5V6P-M3-18
Microchip Technology
SMAJ5940CE3/TR13
NTE Electronics, Inc
NTE5011T1
Microchip Technology
JANTX1N4618C-1/TR
Vishay General Semiconductor - Diodes Division
BZX55B47-TAP
Central Semiconductor Corp
CMOZ6V2 BK PBFREE
Microchip Technology