BZT52B3V6-E3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
10,000+
$0.04080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuits with the BZT52B3V6-E3-18 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.6 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 80 Ohms
- Current - Reverse Leakage @ Vr: -
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Vishay General Semiconductor - Diodes Division
GDZ27B-E3-18
Microchip Technology
JANTXV1N3020CUR-1/TR
Fairchild Semiconductor
FLZ12VA
Microchip Technology
JANTXV1N979D-1/TR
Renesas Electronics America Inc
HZS6A3TD-E
SMC Diode Solutions
SFC5V650
Microchip Technology
CDLL5524A/TR
MACOM Technology Solutions
JANTX1N4108-1
Microchip Technology
JANTX1N4973
Microchip Technology