BZT52B30-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
15,000+
$0.04114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with BZT52B30-HE3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, offering exceptional voltage regulation and protection. Key features include high surge capability, minimal noise, and consistent performance across temperature ranges, making them perfect for medical equipment, instrumentation, and renewable energy systems. Depend on our expertise for top-tier components. Have questions or need a sample? Get in touch now for personalized assistance!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 30 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 35 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 22.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Panjit International Inc.
1SMA4746-AU_R2_000A1
Vishay General Semiconductor - Diodes Division
BZX384C33-E3-18
Microchip Technology
JAN1N5537C-1
Microchip Technology
1N4928
Vishay General Semiconductor - Diodes Division
TZM5222B-GS08
Vishay General Semiconductor - Diodes Division
BZD27C100P-E3-18
Microchip Technology
JAN1N5539C-1/TR
Diodes Incorporated
GDZ3V6LP3-7
Central Semiconductor Corp
CMOZ4V3 TR PBFREE
Taiwan Semiconductor Corporation