BZT52B18-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
10,000+
$0.04114
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B18-HE3-18 Zener Diodes by Vishay General Semiconductor - Diodes Division set the benchmark for reliability and precision in voltage regulation. Featuring low dynamic impedance, high power handling, and superior thermal characteristics, these diodes are suited for aerospace, defense, and high-end computing applications. Trust our industry-leading quality for your critical projects. Need more details or ready to place an order? Send us your inquiry and we ll provide the best options for you!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 18 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 18 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 14 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Vishay General Semiconductor - Diodes Division
BZG05C9V1-M3-18
Microchip Technology
CDLL5265/TR
Microchip Technology
JANTX1N5545DUR-1
Diodes Incorporated
BZT52C12T-7
Vishay General Semiconductor - Diodes Division
1N5262B-TAP
Microchip Technology
JAN1N4492C
Microchip Technology
JANTX1N978DUR-1/TR
onsemi
SZNZ9F3V9T5G
Microchip Technology
JANTX1N5524CUR-1/TR
Nexperia USA Inc.