BZT52B18-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 410MW SOD123
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BZT52B18-E3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division set the benchmark for reliability and precision in voltage regulation. Featuring low dynamic impedance, high power handling, and superior thermal characteristics, these diodes are suited for aerospace, defense, and high-end computing applications. Trust our industry-leading quality for your critical projects. Need more details or ready to place an order? Send us your inquiry and we ll provide the best options for you!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 18 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 18 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 14 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Panjit International Inc.
PZS514V3BAS_R1_00001
Microchip Technology
CDLL4624/TR
Vishay General Semiconductor - Diodes Division
MMSZ4702-G3-18
Taiwan Semiconductor Corporation
BZT52B4V7-G RHG
Microchip Technology
1N6016A
Vishay General Semiconductor - Diodes Division
BZX84B2V7-HE3-18
Rohm Semiconductor
EDZVFHT2R5.1B
Vishay General Semiconductor - Diodes Division
BZX85C3V6-TAP
Diodes Incorporated
DDZ9712S-7
Comchip Technology