BZD27C9V1P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
30,000+
$0.13907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your voltage regulation with BZD27C9V1P-HE3-08 Zener Diodes from Vishay General Semiconductor - Diodes Division, a trusted name in discrete semiconductor products. These diodes provide features like precise breakdown voltage, fast response time, and excellent stability, ideal for use in consumer electronics, industrial controls, and IoT devices. Backed by rigorous testing, our products meet global standards. Looking for a reliable supplier? Contact us today to discuss your needs and receive a tailored solution!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 9.1 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 4 Ohms
- Current - Reverse Leakage @ Vr: 10 µA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
JANTXV1N6322US/TR
Microchip Technology
1N4745CPE3/TR12
Vishay General Semiconductor - Diodes Division
MMSZ5251B-HE3-18
Vishay General Semiconductor - Diodes Division
MMSZ5251B-HE3-08
Vishay General Semiconductor - Diodes Division
BZD27B110P-M3-18
Vishay General Semiconductor - Diodes Division
1N5228C-TR
Microchip Technology
SMBJ4747AE3/TR13
Microchip Technology
JANTX1N6327CUS
onsemi
BZX84C20LT1G
Microchip Technology