BZD27C33P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 800MW DO219AB
$0.45
Available to order
Reference Price (USD)
3,000+
$0.14431
6,000+
$0.13500
15,000+
$0.12569
30,000+
$0.11917
75,000+
$0.11638
Exquisite packaging
Discount
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Upgrade your circuits with the BZD27C33P-HE3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 24 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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