BZD27C130P-M3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 130V 800MW DO219AB
$0.17
Available to order
Reference Price (USD)
30,000+
$0.15855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuits with the BZD27C130P-M3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 130 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 300 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
onsemi
SZMMSZ5259BT1G
Diodes Incorporated
BZT52C6V2TQ-13-F
Vishay General Semiconductor - Diodes Division
BZX84B3V9-G3-18
Microchip Technology
1N5930AP/TR12
Vishay General Semiconductor - Diodes Division
BZX85B18-TR
Vishay General Semiconductor - Diodes Division
BZX384C2V4-G3-18
Vishay General Semiconductor - Diodes Division
BZM55C6V2-TR3
Microchip Technology
1N965B-1
Microchip Technology
JAN1N4115DUR-1
Microchip Technology