BZD27B47P-M3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 800MW DO219AB
$0.45
Available to order
Reference Price (USD)
3,000+
$0.13160
6,000+
$0.12460
15,000+
$0.11760
30,000+
$0.10920
75,000+
$0.10570
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Power your innovations with BZD27B47P-M3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, designed for precision and durability. These diodes offer features such as excellent temperature stability, low reverse leakage, and high surge resistance, making them ideal for automotive electronics, solar inverters, and battery management systems. Count on us for high-performance solutions. Interested in custom specifications? Contact our team now for expert guidance and swift delivery!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 47 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 45 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 36 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
1N4740AE3/TR13
Vishay General Semiconductor - Diodes Division
BZT52C4V3-G3-08
NXP Semiconductors
BZV85-C47,113
Microchip Technology
JANTX1N5541B-1/TR
Taiwan Semiconductor Corporation
BZX584B7V5 RSG
onsemi
MMSZ5254BT1G
Microchip Technology
1N4733E3/TR13
Panjit International Inc.
2EZ47_R2_00001
Fairchild Semiconductor
1N5231B_NL
Microchip Technology