BZD27B3V6P-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
30,000+
$0.09310
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your circuits with the BZD27B3V6P-E3-08 Zener Diodes by Vishay General Semiconductor - Diodes Division, perfect for maintaining voltage stability in demanding environments. These diodes feature sharp breakdown characteristics, low leakage current, and high power dissipation, suitable for voltage regulation, overvoltage protection, and waveform clipping. Trusted by engineers worldwide, our Zener Diodes deliver unmatched performance. Interested in bulk orders or custom solutions? Reach out now for expert support and competitive pricing!
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 3.6 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 8 Ohms
- Current - Reverse Leakage @ Vr: 100 µA @ 1 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
Related Products
Microchip Technology
CDLL5268A/TR
onsemi
BZX84B18LT3
Microchip Technology
CDLL5544A/TR
Microchip Technology
JANS1N4105UR-1
Microchip Technology
JANTX1N5539CUR-1/TR
Micro Commercial Co
3EZ17D5-TP
Comchip Technology
CZRF52C4V7-HF
Vishay General Semiconductor - Diodes Division
BZG04-27-HM3-08
Microchip Technology
1N4759APE3/TR8
Rohm Semiconductor